High-Purity Carbon and Graphite Products

High-Purity Carbon and Graphite Products

CLEAR CARBON (Susceptor/SiC coated graphite)

High-Purity Carbon materials

CoorsTek’ high-purity graphite products, which have unique properties compared with metal materials and other ceramic materials, are used in a variety of industries, including semiconductors. In particular, our high-purity graphite materials, which contain less than 3 ppm of ash, are widely used in heaters and crucibles for pulling single crystal silicon and boats for liquid-phase epitaxial growth in the semiconductor manufacturing processes. In addition, CLEAR CARBON, composed of an SiC film coated on a high-purity graphite substrate, has earned a reputation for excellent quality worldwide as susceptors for epitaxial growth and other jigs.

Product Lineup

CLEAR CARBON (SiC coated graphite) Susceptor for EPI

AP70 (Graphite for semiconductor manufacturing)

Image of AP70 (Graphite for semiconductor manufacturing)

AP70 (Graphite for semiconductor manufacturing)

Advantage of CLEAR CARBON

1.Well grown SiC crystal

Image of Well grown SiC crystal

CLEAR CARBON

Conventional CVD-Sic coating

2.Strong bonding between SiC & Graphite

Image of Chart of Strong bonding etween SiC & Graphite

SiC anchored deeply in the surface layer of graphite substrate; it provides CLEAR CARBONwith strong adhesion of SiC to Graphite substrate

3. CLEAR CARBONHeat Resistance Test


Product name	Gas	Process temperature ()
Product name	Gas	1300	1350	1400	1450	1500	1550
CLEAR CARBON	H₂
CLEAR CARBON	H₂+HCI
Conventional CVD-Sic coating	H₂
Conventional CVD-Sic coating	H₂+HCI

[Criteria]: : No defects : Minor surface defects : Some sublimation : Major sublimation
[Process conditions]: H₂ : H2=20 SLM, 100Torr, 60min.; H₂+HC1 : H₂=20 SLM, HC1=0.5SLM, 100Torr, 60min.

4. Controllability of temperature distribution on wafer

Image of Higher Crystallinigy Better Durability Easier to tune, (less particle)

5. Capability to meet wide range of surface finishes

Normal surface (non surface finish)
Image of Normal surface (non surface finish)

Surface finish 1
Image of Surface finish 1

Surface finish 2
Image of Surface finish 2

Major applications

CLEAR CARBON is used in wide range of semiconductor manufacturing processes,
e.g., Epitaxial growth, MO-CVD, etc.

General property of CLEAR CARBON (Typical Data)

SiC coating film
Structure	-SiC
Bulk Density	3.2
Bending Strength	500MPa
Thermal conductivity	200W/mK
Emissivity (650)	76%
Coefficient of Thermal (25-1200)	4.410^-6/

Graphite Substrate (AP70)
Bulk Density	1.88g/cm³
Open Porosity	10%
Shore Hardness	60
Specific Resistance	11
Bending Strength	45MPa
Young's Modulus	13.5GPa
Thermal Conductivity	107W/mK
Coefficient of Thermal Expansion	4.810^-6/K

AP70 (Graphite for semiconductor manufacturing)

Advantage of AP70

Extremely dense as compared to standard graphite substrate material
Extremely good thermal uniformity
High durability

Accelerated test for oxidation rate (Typical data) Image ofAccelerated test for oxidation rate

Measure applications of AP70

Carbon Heater/Crucible and Radiation Shield for CZ pulling
Crucible for melting compound semiconductor

General property of AP70 (Typical data)

Graphite Substrate (AP70)
Bulk Density	1.88g/cm³
Open Porosity	10%
Shore Hardness	60
Specific Resistance	11
Bending Strength	45MPa
Young's Modulus	13.5GPa
Thermal Conductivity	107W/mK
Coefficient of Thermal Expansion (0-450)	4.810_-6/K

Contacts

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