CoorsTek’ high-purity graphite products, which have unique properties compared with metal materials and other ceramic materials, are used in a variety of industries, including semiconductors. In particular, our high-purity graphite materials, which contain less than 3 ppm of ash, are widely used in heaters and crucibles for pulling single crystal silicon and boats for liquid-phase epitaxial growth in the semiconductor manufacturing processes. In addition, CLEAR CARBON, composed of an SiC film coated on a high-purity graphite substrate, has earned a reputation for excellent quality worldwide as susceptors for epitaxial growth and other jigs.

Product Lineup

CLEAR CARBON (SiC coated graphite) Susceptor for EPI

AP70 (Graphite for semiconductor manufacturing)

Advantage of CLEAR CARBON

1.Well grown SiC crystal

2.Strong bonding between SiC & Graphite

SiC anchored deeply in the surface layer of graphite substrate; it provides CLEAR CARBONwith strong adhesion of SiC to Graphite substrate

3. CLEAR CARBONHeat Resistance Test

Product name	Gas	Process temperature ()
		1300	1350	1400	1450	1500	1550
CLEAR CARBON	H2
	H2+HCI
Conventional CVD-Sic coating	H2
	H2+HCI

[Criteria]

: No defects : Minor surface defects : Some sublimation : Major sublimation

[Process conditions]

H₂ : H2=20 SLM, 100Torr, 60min.

H₂+HC1 : H₂=20 SLM, HC1=0.5SLM, 100Torr, 60min.

4. Controllability of temperature distribution on wafer

5. Capability to meet wide range of surface finishes

Normal surface (non surface finish)

Surface finish 1

Surface finish 2

Major applications

CLEAR CARBON is used in wide range of semiconductor manufacturing processes,
e.g., Epitaxial growth, MO-CVD, etc.

General property of CLEAR CARBON (Typical Data)

SiC coating film
Structure	-SiC
Bulk Density	3.2
Bending Strength	500MPa
Thermal conductivity	200W/mK
Emissivity (650)	76%
Coefficient of Thermal (25-1200)	4.410-6/

Graphite Substrate (AP70)
Bulk Density	1.88g/cm3
Open Porosity	10%
Shore Hardness	60
Specific Resistance	11
Bending Strength	45MPa
Young's Modulus	13.5GPa
Thermal Conductivity	107W/mK
Coefficient of Thermal Expansion	4.810-6/K

AP70 (Graphite for semiconductor manufacturing)

Advantage of AP70

1. Extremely dense as compared to standard graphite substrate material
2. Extremely good thermal uniformity
3. High durability

Accelerated test for oxidation rate (Typical data)

Measure applications of AP70

• Carbon Heater/Crucible and Radiation Shield for CZ pulling
• Crucible for melting compound semiconductor

General property of AP70 (Typical data)

Graphite Substrate (AP70)
Bulk Density	1.88g/cm3
Open Porosity	10%
Shore Hardness	60
Specific Resistance	11
Bending Strength	45MPa
Young's Modulus	13.5GPa
Thermal Conductivity	107W/mK
Coefficient of Thermal Expansion (0-450)	4.810-6/K